Ultrasound-assisted anodization of aluminum in oxalic acid

Porous anodic alumina is an important nanoscale template for fabrication of various nanostructures. We report a new ultrasound-assisted anodization process in oxalic acid. Under the continuous irradiation of ultrasound, the one-step-anodized sample has a smooth and clean surface, and two-step-anodization brings ordered porous anodic alumina with higher growth rate of 52 μm/h. The ultrasound applied during the anodization can clean the surface and enhance the nanopore growth since it can accelerate the oxide dissolving on the electrolyte/oxide interface. The ultrasound-assisted anodization may be utilized for other anodizations.     

Template-free synthesis of TS-1 zeolite film on tubular mullite support

The TS-1 film on tubular mullite support was prepared by secondary growth via template-free route using tetraethyl orthosilicate (TEOS) and tetrabutyl orthotitanate (TBOT) as silica and titanium sources. The as-made films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and ultraviolet-visible spectroscopy (UV-vis). Continuous TS-1 seed layer was bonded tightly to the mullite substrates. After secondary growth in the template-free synthesis solution, intergrown TS-1 zeolite film with the typical MFI-type structure was formed on the outer surface of support. The Si atoms in zeolitic lattice were found to be isomorphously substituted by Ti atoms which existed only in tetrahedral coordination. The thickness of the obtained TS-1 zeolite film was less than 20 μm.     

Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD

In_0.82Ga_0.18As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In_0.82Ga_0.18As buffer layer was introduced to improve the crystalline quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the crystalline quality of the In_0.82Ga_0.18As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In_0.82Ga_0.18As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In_0.82Ga_0.18As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best crystalline quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.     

基于光电准直虚拟扩展成像的姿态角测量系统的误差分析

建立了基于光电准直原理的姿态角测量系统,提出一种虚拟扩展成像面技术,应用于测量系统中,对图像传感器成像面进行复用,虚拟扩大系统的测量视场.介绍了系统的主要工作原理,在系统模型下,对可能影响系统测量精度的误差源进行了分析,建立其数学关系,对精度影响因素进行了定量仿真实验.按照仿真结果,对系统设计方案进行了分析验证.结果表...     

聚变反应历程测量系统研制及应用

为了测量惯性约束聚变实验中的聚变反应时间过程,研制了一套时间分辨优于40 ps的聚变反应历程测量系统.该系统由闪烁体及鼻锥部分、光学系统和条纹相机系统三部分组成.其中闪烁体将中子信号转换为可见光信号,光学系统则将闪烁体的发光信号成像在条纹相机上进行记录.为得到信号与入射激光的时间关系,还将时标引入了条纹相机进行记录.在...     

单目摄像机-激光测距传感器位姿测量系统

在单目视觉测量中,由于模型自身的限制,沿摄像机光轴方向上的位移测量精度一般远低于垂直光轴方向上的位移测量精度.首先,从数学模型上分析了单目视觉位姿测量在沿光轴方向上位移测量精度低的原因;然后,为了提高沿摄像机光轴方向上的位移测量精度,通过在沿摄像机光轴方向上加装一个高精度的激光测距传感器,设计了一种单目摄像机-激光测距...     

辐射驱动条件下冲击波诊断用透明窗口离化现象研究

针对间接驱动情况下,冲击波诊断中出现的X光离化问题,利用半导体模型,解释了蓝宝石和石英晶体材料中出现黑区的理论过程,并进行了实验验证.利用光生载流子模型分析了石英晶体中时间方向上出现调制的过程,并进行了实验验证.发现使用石英晶体作为窗口材料,使用60μm厚度的烧蚀层,在180 eV辐射温度条件下,没有出现明显的黑区.使...     

负偏压作用下染料敏化太阳电池界面及光电性能研究

太阳电池组件由于局部电压不匹配,其中部分电池可能较长时间工作在负偏压状态下,从而影响电池光电性能.借助拉曼光谱、电化学阻抗谱和入射单色光量子效率(IPCE)等测试手段,研究长期负偏压作用下染料敏化太阳电池光电性能的变化及其影响机理.拉曼光谱研究结果表明:电池在1000 h负偏压作用下,电解质中阳离子(Li⁺)会向光阳极(TiO₂电极)移动并嵌入TiO₂薄膜中;长期负偏压作用还会致使TiO₂/电解质界面阻抗增大和IPCE下降,导致电池开路电压升高和短路电流减小.通过加入苯并咪唑(BI)添加剂,经1000 h负偏压后电池的拉曼光谱实验表明,BI能在一定程度阻碍Li⁺的嵌入,电池具有较好的长期稳定性.不同负偏压下的老化实验进一步表明,通过加入添加剂能够使电池在长期负偏压下保持较好的稳定性. 关键词： 染料敏化 太阳电池 组件 负偏压     

纳米TiO2叶片状阵列电极的制备及其在染料敏化太阳电池中电子的输运性能

在低温条件下采用定向刻蚀技术, 对金属Ti片表面用H₂O₂溶液进行刻蚀氧化, 制备了垂直生长的纳米TiO₂叶片状阵列薄膜电极. 通过X射线衍射分析表明, 纳米TiO₂叶片状阵列薄膜经500 ℃下烧结1 h后, 从无定型转变为锐钛矿相. 场发射扫描电子显微镜观察表明: 在80 ℃下的H₂O₂溶液刻蚀氧化, 经1 d制备得到的是Ti片表面垂直生长的叶片状阵列, 其形貌均匀且完整地 关键词： 2')" href="#">纳米TiO₂ 叶片状阵列电极 染料敏化太阳电池 电子传输     

含有源频率选择表面可调复合吸波体

基于传输线等效理论,设计了含有源频率选择表面(active frequency selective surface,AFSS)的三层可调复合吸波体,第一层是表面层,为AFSS衬底;中间层是AFSS层,由频率选择表面(frequency selective surface,FSS)和PIN二极管阵列构成;第三层是介质层.反射率测量结果表明,通过调节PIN二极管阵列偏置电压可以动态调节吸波体反射特性,在偏置电压为5 V时,可获得最佳吸波性能,在5—15 GHz和5.3—13 GHz频段分别可获得-8 dB和- 关键词： 频率选择表面 复合吸波材料 反射率 PIN二极管